Nano-Integration Devices and Processing
Laboratory for Nanoelectronics and Spintronics,
Research Institute of Electrical Communication, Tohoku University

SatoSakurabaYamamoto lab.

Development of next-generation device and process technologies
to support the coming super-smart society (Society 5.0)
Development of next generation device and process technologies

Research Outline

In addition to the conventional demands such as faster operation and larger throughput, low power operation for low-carbon emission and robust operation not damaged even in a disaster are required for the development of the next generation information technology. To meet these demands, studies on high functional and high performance Si-based semiconductor devices realized by 3-D nano-processing and large scale integration of such devices are important research subjects. We study the subjects such as new transistors and memories using new materials, new devices based on new principles like quantum effects, and required 3-D processing. Moreover, we develop advanced technologies related to 3-D nano-integration, dependable mixed signal LSI, and non von Neumann architecture.

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